RF reliability studies: device model and application to power amplifier M/F
Internship Crolles (Isère) IT development
Job description
General information
Reference
2020-4613
Job level
30 - Graduate Entry Level
Position description
Posting title
RF reliability studies: device model and application to power amplifier M/F
Regular/Temporary
Temporary
Job description
The requirement to develop performant power amplifier pushes the device in its reliability limits. Indeed high gain can be fulfilled with large RF swing and thus large Vds excursion. There is a need to provide accurate ageing model in RF/mmW domain at early stage of circuit development. First step is to consolidate the ageing model (CMOS & LDMOS) at device level, for different topologies, with comparison of RF stress/measurement. To improve correlation model/measurement, the degradation of DC and AC model components need to reflects the impact of defects location. Some models enhancement will be proposed (dissymmetrical degradation, self-heating, Cgd degradation, breakdown description). Finally, correlation with power amplifier will be performed (load pull test bench), and some design strategies will be propose to manage reliability during operation lifetime.
Profile
RF design knowledge are required
Position localisation
Job location
Europe, France, Crolles
Candidate criteria
Education level required
5 - Master degree
Experience level required
2-5 years
Requester
Desired start date
01/07/2020