Offers “STMicroelectronics”

Expires soon STMicroelectronics

RF reliability studies: device model and application to power amplifier M/F

  • Internship
  • Crolles (Isère)
  • IT development

Job description



General information

Reference

2020-4613  

Job level

30 - Graduate Entry Level

Position description

Posting title

RF reliability studies: device model and application to power amplifier M/F

Regular/Temporary

Temporary

Job description

The requirement to develop performant power amplifier pushes the device in its reliability limits. Indeed high gain can be fulfilled with large RF swing and thus large Vds excursion. There is a need to provide accurate ageing model in RF/mmW domain at early stage of circuit development. First step is to consolidate the ageing model (CMOS & LDMOS) at device level, for different topologies, with comparison of RF stress/measurement. To improve correlation model/measurement, the degradation of DC and AC model components need to reflects the impact of defects location. Some models enhancement will be proposed (dissymmetrical degradation, self-heating, Cgd degradation, breakdown description). Finally, correlation with power amplifier will be performed (load pull test bench), and some design strategies will be propose to manage reliability during operation lifetime.

 

Profile

RF design knowledge are required  

 

Position localisation

Job location

Europe, France, Crolles

Candidate criteria

Education level required

5 - Master degree

Experience level required

2-5 years

Requester

Desired start date

01/07/2020

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