RF IP developer for technology development M/F

Job description

General information

Reference

2020-4340  

Job level

30 - Graduate Entry Level

Position description

Posting title

RF IP developer for technology development M/F

Regular/Temporary

Regular

Job description

STMicroelectronics Semiconductor Sector Crolles Site FEM PR&D - TDP iDNA - RFSS R&D RF Engineer RF&mmW Passive Components Design Silicon technologies are widely addressing wireline and wireless applications from RF (Mobile Communications, Connectivity 800MHz-6GHz range) to mmW (5G, 70-80GHz applications), sub mmW (above 80GHz) spectra.

The job proposed here consists in developing competitive RF&mmW IP's (LNA, PA, SWITCH, VCO,...) to support development of advanced RF technologies in 200mm and 300mm ST fabs.

This R&D development will take into account an industrial context aiming optimized performance, integration, reliability, and cost efficiency of developed offers.

The engineer will be member of an R&D RF team which mission is to design, characterize and model RF&mmW passives devices in ST technologies to support our customer project through model delivery for Design Kit library or custom RF services. This team is part of a Technology Development department covering Digital, Non Volatile Memory and Analog/RF/Photonics technologies

Profile

Experience in RF design, device and modelling is mandatory for the job.
Curiosity, creativity and teamwork are needed.

Basic knowledge of RF technology process and characterization are complementary skills

Position localisation

Job location

Europe, France, Crolles

Candidate criteria

Education level required

7 - Research Doctorate – PhD

Experience level required

2-5 years

Languages

English (2- Business fluent)

Requester

Desired start date

01/03/2020