Offers “STMicroelectronics”

Expires soon STMicroelectronics

High Performance Schttky Diode Evaluation in advanced BiCMOS and RF SOI technologies targeting THz c M/F

  • Internship
  • Crolles (Isère)
  • Teaching

Job description



General information

Reference

2019-2730  

Job level

30 - Graduate Entry Level

Position description

Posting title

High Performance Schttky Diode Evaluation in advanced BiCMOS and RF SOI technologies targeting THz c M/F

Regular/Temporary

Temporary

Job description

Context:

 

5G technology being under commercial deployement, R&D activity has now started on 6G which is envisioned to operate at higher frequencies (> 100 GHz). In this context, new devices will be required in order to enable the development of silicon based IC able to operate at such high frequency. Schottky diode is a good example since most IC developped in III-V technology > 100 GHz use a mixer first architecture leveraging excellent performances of Schottky based sub-harmonic mixer. Consequently, the development and the modeling of high performances Schottky diode in advanced CMOS and BiCMOS technologies is a key challenge.

 

Objective:

Innovative Schottky diodes have been previously developed at ST (cut off frequency > 1,7 THz), the main objective is here to take advantage of the development of new RF SOI & BiCMOS technologies in order to achieve improved performances. In a second step, developed Schottky diodes will be used in order to design preliminary building blocks (sub harmonic mixer, THz pixel based on direct detection) and help to validate the modeling strategy.
Main Tasks:
The trainee will first layout Schottky diode test structures leveraging both previous development and technology booster available in new technologies. In order to secure the PhD work to pursue this development, sub-harmonic mixer design will then be initiated leveraging proposed innovative Schottky diodes.

Profile

3rd year engineering student or master student

Position localisation

Job location

Europe, France, Crolles

Candidate criteria

Education level required

5 - Master degree

Experience level required

Less than 2 years

Languages

English (1- Basic)

Requester

Desired start date

02/03/2020

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